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RTD与HBT单片集成研究

Study on RTD/HBT Monolithic Integration
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摘要 设计并研制了共振隧穿二极管(RTD)与异质结双极晶体管(HBT)单片集成负阻逻辑单元。详细介绍了逻辑单元的材料结构及工艺流程的设计过程,得到了较好的负阻特性,其开启电压1V左右,峰谷比大于2∶1。同时建立了负阻逻辑单元的模型,通过Pspice模拟结果表明与实际逻辑单元特性吻合良好。 We designed and made a monolithic integrated negative resistance logic unit, which is composed of resonant tunneling diodes（RTD） and heterojunction bipolar transistors （HBT）. The material structure and technological process design of the logic unit is introduced in detail. A good characteristic is obtained with turn-on voltage of 1 V and peak-to-valley current ratio of more than 2 ： 1. Meanwhile, the circuit model of negative resistance logic unit is established. The simulation results using PESPICE software of the logic unit agree with the characteristics of the real logic unit very well.
作者 胡海蓉 牛萍娟 刘宏伟 郭维廉 许丹 于欣 王文新 尚勋忠 吴曙东
机构地区 天津工业大学信息与通信工程学院 中国科学院物理所表面物理国家重点实验室
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2005年第4期456-459,516,共5页 Research & Progress of SSE
基金 天津市高等学校科技发展基金(20020711) 天津市应用基础研究重点项目(043800811)
关键词 共振隧穿二极管 异质结双极晶体管 单片集成 负阻逻辑单元 Resonant Tunneling Diode（RTD） Heterojunction Bipolar Transistor（HBT） monolithic integrated negative resistance logic unit
分类号 TN312.2 [电子电信—物理电子学]
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参考文献10

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二级参考文献21

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固体电子学研究与进展
2005年 第4期

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