GaAs基改性高电子迁移率晶体管(MHEMT)的计算机模拟与优化

The CAD Simulation and Design Optimization of Metamorphic High Electron Mobility Transistors(MHEMT)

讨论了针对GaAs基改性高电子迁移率晶体管(MHEMT)的异质层结构参数的设计优化方法,详细给出了有关的设计步骤与公式。在数值分析与比较的基础上,并综合考虑材料生长与器件工艺的简便性,得到一组优化的MHEMT异质层结构设计参数。模拟所得的器件DC与RF特性充分显示其在功率与低噪声应用上的巨大潜力。验证性的1μm×200μmMHEMT取得的fT=30GHz、fmax=170GHz的结果佐证了理论分析的正确性。

The design method of hetero-layer-structure parameter optimization for metamorphic high electron mobility transistors （MHEMTs） has been discussed, in which the design procedure and the formulas were given in detail. By the use of the method, the effects of each hetero-layer in MHEMTs on device performance were analyzed upon simulation; therefore, an optimized MHEMT hetero-layer-structure was determined in combination with considerations in easy MBE growth and compact device fabrication. The superiorities have been clearly shown for both high power and low-noise applications from the simulated characteristic of the MHEMT using this structure. As an evidence, the experimental result of fT=30 GHz and fmax =170 GHz from 1 μm×200 μm MHEMTs fabricated on a low-doping level wafer was shown.