摘要
借助Tsuprem-4和Medici软件详细讨论分析了高压N-LDMOS器件的衬底浓度、漂移区注入剂量、金属场极板长度等参数与击穿电压之间的关系,通过对各参数的模拟设计,最终得到兼容体硅标准低压CMOS工艺的500V体硅N-LDMOS的最佳结构、工艺参数,通过I-V特性曲线可知该高压N-LDMOS器件的关态和开态击穿电压都达到500V以上,开启电压为1.5V,而且制备工艺简单,可以很好地应用于各种高压功率集成芯片。
In the paper, the relations of the breakdown voltage to the substrate concentration, the drift doses and the metal-filed-plate length have been discussed in detail with the two softwares：Tsuprem-4 and Medici. The optimal 500 V bulk-silicon N-LDMOS, which was compatible with the standard low voltage CMOS process, was proposed after the simulations on the parameters of the N-LDMOS. The breakdown voltages of the given N- LDMOS exceed 500 V both in the off-and on-state, which can be seen from the I- V characteristic curves. The threshold voltage of the N-LDMOS is 1. 5 V. The presented N- LDMOS can be well applied in the high voltage power ICs for its simple process that is compatible with the CMOS process.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2005年第4期521-525,539,共6页
Research & Progress of SSE
基金
国家"863"计划资助(NO.20004AA1Z1060)
关键词
漂移区
金属场极板
击穿电压
体硅
drift region
metal-field-plate
breakdown voltage
bulk-silicon
