摘要
为了改善有机发光器件(OLEDs)的性能,在0～600 ℃不同温度下对ITO透明导电玻璃进行了退火处理.SEM观察到随退火温度的升高,ITO表面粗糙度增加;四探针电阻测试结果显示,在300 ℃以上温度退火后ITO表面电阻率有明显增加.用退火前后的ITO玻璃作为阳极制备了OLEDs,器件结构为ITO/TPD/Alq3/Al,比较器件的电流密度-电压特性曲线测试结果表明,ITO薄膜的热处理温度对OLEDs性能有显著的影响.
The characteristics of indium tin oxide （ITO） films deposited on glass substrates were investigated by thermal annealing at different temperature in the range from 0 ℃ to 600℃ to improve their quality for use in organic light-emitting diodes （OLEDs）. The morphology of the ITO films surface was significantly changed by the treatment as observed by scanning electron microscopy （SEM）. At higher temperatures （〉300℃）, the shift resistance obviously increases with increasing of annealing temperature. The electrical and optical characteristics of OLEDs with the structure of ITO/TPD/ Alq3/A1, prepared on pre-treated and untreated ITO substrates, were determined and compared. The results show that the performances of OLEDs are influenced remarkably by ITO substrates annealed at different temperature.
出处
《液晶与显示》
CAS
CSCD
北大核心
2005年第6期498-502,共5页
Chinese Journal of Liquid Crystals and Displays
基金
广东省自然科学基金资助项目(No.021169)
