摘要
In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology.From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by ShanghaiSimgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paperpresents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers inChina.
In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI （SGOI） material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology. From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by Shanghai Simgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology （SIMIT）, Chinese Academy of Sciences （CAS）, and shipped to the semiconductor industry worldwide. This paper presents an outlook for R ＆ D on SOI technologies, and the recent status and future prospect of SIMOX wafers in China.
关键词
SOI技术
硅结构
离子注入技术
半导体
Silicon-on-insulator（SO1）, Ion implantation, Separation by implanted oxygen （SIMOX）
