硅基1.55μm可调谐共振腔窄带光电探测器的研究

The Fabrication of Low Cost Si-based Continuously Tunable 1.55μm RCE Photodetector

制作了一种低成本硅基1.55μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44%,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.

A novel method for fabricating low cost Si-based continuously tunable long wavelength resonant cavity enhanced （RCE） photodetectors was reported, in which InGaAs epitaxy layers were bonded to silicon substrates without any special treatment on bonding surfaces,employing the silicate gel as bonding medium. A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3-1.6μm was obtained, with a quantum efficiency of about 44% at the resonant wavelength of about 1.5μm and a FWHM of about 12.5 nm. A tuning range of 14.5 nm and a 3 dB bandwidth of 1.8 GHz were obtained. This device was fabricated with traditional processes, thus the cost was decreased. It demonstrates a great potential for industry processes.