摘要
采用溶胶-凝胶法合成了钒酸铟,颗粒直径在100～200nm范围内。XRD研究表明钒酸铟的晶体结构属正交晶系C mcm空间对称群。紫外-可见吸收光谱研究表明,这种介观粒子钒酸铟的吸收光谱发生了蓝移,其能隙为2.17eV,而相应体相态钒酸铟的能隙为2.00eV。扩散反射光谱研究表明,钒酸铟是一种间接光电子跃迁材料。光电化学研究表明,钒酸铟是一种N-型半导体,其导带电位相对于标准氢电位为-0.11V,价带电位为2.06V。
An InVO4 is synthesized by the sol-gel method. The diameter of the resulting ompound is between 100 nm and 200 nm. XRD studies showed that the InVO4 sample is the orthorhombic system with space group Cmcm. Ultraviolet-visible studies revealed the absorbance spectrum of the InVO4 synthesized by the sol-gel method is shifted to ultraviolet region. The band gap is 2.17 eV, which is larger than 2.00 eV of the bulk InVO4. The studies of the diffuse reflectance spectrum indicated that the InVO4 is an indirect phototransition material. Photoelectrochemical studies showed that the InVO4 is an n-type semiconductor with -0.11 V vs NHE of the conduction band edge and 2.06 V vs NHE of the valance band edge.
出处
《苏州科技学院学报（自然科学版）》
CAS
2005年第4期50-56,共7页
Journal of Suzhou University of Science and Technology （Natural Science Edition）
基金
江苏省教育厅指导性项目(JHZD04-010,02KJD150009)
苏州科技学院科研基金项目
