摘要
论述了直流磁控溅射法低温ITO透明导电薄膜的过程中,衬底温度、溅射功率、溅射压强、水蒸气分压对ITO薄膜的光电性能的影响。在通入分压为3×10-5Torr的水蒸气、衬底温度50℃、低功率100W的条件下制备出了光电性能优良的ITO透明导电膜,其方阻为27.5Ω/□,在可见光区平均透过率高于为83%。
The photoelectric properties of ITO films were studied with different deposition parameters such as the temperature of substrates, power, pressure, H2O gas partial pressure during direct current magnetron sputtering at low temperature. Using 50℃ substrates, an addition of 3 ×10^-5 Torr of H2O gas in the sputtering process achieved the ITO films with sheet resistance of 27.5Ω/□ and transparency of over 83% in the visible wavelength region.
出处
《现代显示》
2005年第12期44-47,共4页
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关键词
低温ITO
直流磁控溅射
光电性能
Low temperature ITO
direct current magnetron sputtering
Photoelectric properties
