摘要
基于扫描隧道显微镜（scanning tunneling micmscope，STM）的新型扫描阻抗显微镜（scarming impedance microscope，SIM）可以对绝缘电介质表而的阻抗性质进行测量，但由于传统STM针尖不适用于这种模式，需要制备新型的探针。介绍了利用电化学腐蚀法制备SIM针尖的工艺，研究了制备过程中各种条件的控制对针尖质量的影响。根据实验结果，对切断时问的控制效果提出了与以往经验不同的看法。最后通过实验分析了适用于阻抗性质扫描的针尖特点，认为适用于阻抗扫描的针尖其曲率半径应在100～200nm之间，且具有小的纵横比和一级新月结构。
The novel scanning impedance microscope （SIM） based on scanning tunneling microscopy （STM） can be used to measure impedance of dielectric surface, but because tips used for STM are not suitable for this mode, a new type of tips is needed. The electrochemical method is preferred to produce tips for SIM, and the effect of etching conditions on tips was investigated. The experimental results suggest different ideas from the conventional view on the effect of cut-off time. The characteristic of tips best fit for SIM is also studied, and it is found that the optimal tips should have radii of curvature from 100 to 200 nm with small aspect ratio and only one meniscus step.
出处
《中山大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第A02期170-173,共4页
Acta Scientiarum Naturalium Universitatis Sunyatseni
基金
广东省纳米重大专项基金资助项目(01-09080-4202372)
广州市科技攻关资助项目(2003Z2-D2021)
