金刚石薄膜生长速度研究

Growth of CVD diamond thin films with high growth rate

在电子辅助热丝CVD中,研究刀具预处理对金刚石薄膜生长速度的影响。在保持生长条件不变的前提下,经酸腐蚀处理的刀具的侧、背面镀铜能使金刚石薄膜的生长速度从没有镀铜时的4μm/h增加到镀铜后的10.6μm/h。镀铜处理提高了刀具的电导率,使得热丝发射的电子在偏压电场的作用下,在刀具表面附近聚集,加速氢气和丙酮的裂解,从而提高金刚石薄膜生长速度。SEM和Raman测试结果表明,高速生长的金刚石薄膜仍然具有很高质量。

The effects of the pretreatment of cutting tools substrate on the growth rate of diamond film were studied by using electron assisted hot filament chemical vapor deposition. The growth rate of diamond film on the flank and back of the cutting tools can be improved from 4.0μm/h only with acid etching pretreatment to 10.6μm/h with acid etching and then plated a thin copper film under same growth conditions. The plating copper can increase the conductivity of the cutting tools and help concentration of the electrons come from the hot filament around the surface of cutting tools under the bias voltage. These electrons accelerate the decomposition of hydrogen and acetone and result in the increase of growth rate of the diamond films. SEM images and Raman spectrum show that the diamond films prepared with high growth rate have high qualities.