摘要
采用磁控溅射方法,在玻璃基片上制备了曲折形三层等宽FeCuNbSiB/Cu/FeCuNbSiB多层膜。在1.40MHz下,研究了多层膜材料的巨磁阻抗(GMI)效应随外加磁场的变化关系。结果表明:在频率为5MHz、磁场强度为12kA/m下,横向和纵向GMI效应分别达-23.5%和-16.8%。薄膜材料的纵向、横向GMI效应随外加磁场变化呈现先增后降,而纵向表现尤为明显。
Trilayer FeCuNbSiB/Cu/FeCuNbSiB films with a meander structure were prepared by magnetron sputtering method, and the giant magneto-impedance (GMI) effect was investigated in the frequency range of 1-40 MHz. The results show that the GMI values are -23.5% and -16.8% for a frequency of 5 MHz at a magnetic field of 12 kA/m with magnetic field applied along the longitudinal and transverse direction, respectively. Both the longitudinal and the transverse GMI effect increases with applied magnetic field, reaching a maximum at a field of near the anisotropy field, while the longitudinal GMI effect are better than that of the transverse direction.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第1期23-26,共4页
Electronic Components And Materials
基金
国家863计划资助项目(2004AA302042)
国家自然科学基金资助项目(50275096
10402023)
上海市纳米专项资助项目(0352nm014)