SRAM 6T存储单元电路的PSPICE辅助设计

PSPICE aided design of SRAM 6T storage cell

首先从双稳态电路入手,分析了 SRAM6T 单元电路的工作原理和设计要求。基于实际工艺下 MOS 晶体管的 SPICE 模型,给出了一组可行的设计参数。用 PSPICE 对设计出的6T 存储单元进行了功能验证。

A CMOS SRAM （static random access memory） 6T storage cell was analyzed and the PSPICE aided design method was provided. The SRAM basic storage cell was discussed, and the basic principles and design rules of SRAM cell circuit were described. Finally, The simulation results of PSPICE was presented.