摘要
利用非磁性Ga离子对Na0.8CoO2的Co位进行了掺杂,得到了单相的Na0.8Co1-zGazO2(0≤z≤0.15)样品.通过对材料的晶体结构和电输运特性的研究发现:Ga的固溶极限约等于0.2;Ga离子掺杂后晶胞参数c明显增大;Ga的掺杂虽然使Na0.8CoO2的电阻率有所升高,但对其金属导电行为无显著影响.
The single-phase samples Na0.8Col-xGazO2(0≤z≤0.15) have been synthesized. By dopping the nonmagnetic Ga ions into sites of Co in Na0.8 CoO2. According to investigation of crystal structural and electrical transport properties of synthesized materials, we found that the c-axis lattice parameters increase evidently after doping Ga ions, nevertheless the solid solubility limit of Ga is about equal to 0.2. Doping Ga raises the electrical resistivities of Na0.8CoO2, but that metallic electric behaviors in the compounds have not been influenced markedly.
出处
《延边大学学报(自然科学版)》
CAS
2005年第4期257-260,共4页
Journal of Yanbian University(Natural Science Edition)
基金
国家"973"基金资助项目(2002CB613505)