摘要
本文介绍了GaAs与Si超高速数字集成电路(数字VHSIC)目前的进展情况。从材料特性、器件结构及高速集成电路的应用等方面对GaAs与Si数字VHSIC的性能进行了初步比较。探讨了GaAs与Si数字VHSIC的发展潜力及存在的主要问题。
In this paper, the current R & D of GaAs and Si digital VHSIC are viewed and their performances are compared in terms of material characteristics, device structure and logic circuit applications. The speed potentials and the existing problems are also discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第1期92-99,共8页
Research & Progress of SSE
基金
国家自然科学基金6866010)资助
