晶体管直流模型参数的优化提取

Optimized Extraction for DC Model Parameters of Transistors

本文描述了一个提取MOS场效应晶体管和双极型晶体管直流模型参数的程序。所采用的算法是Meger和Roth方法,它具有较好的收敛性。在目标函数中引入惩罚项,有效地防止了模型参数非物理解的出现。将双极型晶体管直流模型参数分组后优化提取,减少了计算量。应用本程序进行了大量实际器件参数的提取,获得了较满意的结果。

This article describes an efficient and reliable program for extracting MOSFET and bipolar transistor DC model parameters using general-purpose, constrained optimization techniques. The optimization algorithm used is the method of Meyer's and Roth's which shows a nice convergence behaviour. To prevent unexpected excursion of the parameter values, punishing terms are introduced in the object function. In the extraction of bipolar transistor parameters, the model parameters are devided into four groups and extracted separately. In such a way computation time is reduced. The program developed in this article has been used to extract parameters in various transistors, thus leading to satisfactory results.