摘要
为了制备耐高温肖特基势垒,已采用RF或DC磁控溅射法在n^+n型GaAs衬底上溅射淀积钨(W)膜。这种膜具有良好的力学及电学性质。膜的可蚀性及肖特基势垒的热稳定性能够满足自对准栅IC的要求。新颖的自对准结构及用W栅制成的自对准离子注入GaAs MESFET初步特性能说明W栅工艺适用于GaAs IC。
In order to make refractory Schottky barrier, W films have been deposited on n+-n GaAs by RF or DC magaetic coatroled sputtering.Thess films have very good mechanical and electronical characteristics. The etched ability of the films and the high temperature stability of the Schottky barrier satisfy the requirements of SAG ICs. Novel SAG structure and the characteristics of the GaAs MESFET with W SAG indicate that W gate technology is suitable for GaAs ICs.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第1期100-104,共5页
Research & Progress of SSE
