中子嬗变掺杂直拉硅退火温度与目标电阻率的关系

The Relationship Between Annealing Temperature and Target Resistivity in Neutron Transmutation Doping C Z Si (NTDCZ Si)

由于中子辐照诱生的施主(简称中照施主)的产生,使得中子嬗变掺杂直拉硅(NTDCZ Si)的退火行为比较复杂。采用中子嬗变掺杂区熔硅(NTDFZ Si)或者CZ Si热处理消除热施主的退火工艺不能获得真实的目标电阻率。本文研究了NTDCZ Si退火温度与电阻率变化的关系,提出了获得准确目标电阻率的退火温度,讨论了中照施主的产生和消除条件。

The annealing behavior of NTDCZ Si is rather complicated because of the neutron irradiation induced donors (NID). The actual target resistivity can not be achieved by applying annealing process of NTDFZ Si or CZ Si heat-treatment to suppress thermal donor. In this paper, the relatioaship between annealing temperature and resistivity is investigated and the annealing temperature for achieving the actual target resistivity is suggested. Finally the conditions of production and suppression for NID are discussed.