快速热工艺系统中的氮-硅反应

Nitrogen-Silicon Reaction in Rapid Thermal Processing System

本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。并研究了RTP系统中氮-硅反应生成的超薄含氮表面层对氧化的抑制效应。实验结果表明,含氮表面层的生成以及对氧化的抑制效应和硅片初始氧化层厚度、氮-硅反应时的条件有关。

Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made. The oxide growth inhibition property of ultra thin nitrogen-containing layer formed by N2-Si reaction in RTP system has been studied. Results show that the formation of nitrogen-containing surface layer and its inhibition effect on oxidation are in close relationship with the initial oxide thickness and condition of N2-Si reaction.