摘要
本文介绍了ＤＹ－５型亚微米电子束曝光机的主要技术性能：最细特征线宽０．４μｍ；图形位置精度及拼接精度优于±０．１５μｍ；扫描场尺寸１×１ｍｍ２和２×２ｍｍ２；最高扫描速度１ＭＨｚ；可加工１００×１００ｍｍ２掩模版或Φ７５硅圆片。给出了部分曝光试验结果。
The technical specifications of Type DY-5 submicron electron beam exposure machine are introduced. The machine has minimum feature linewidth of 0. 4μm,figure positioning accuracy and stitching accuracy of less than ±0. 15μm,scanning field of 1×1mm2 or 2 ×2mm2 and maximum shot rate of 1MHz. It can fabricate the master reticule of 100×100mm2 or silicon wafer of Φ75. Several testing lithography results are showned.
出处
《微细加工技术》
1996年第1期1-6,共6页
Microfabrication Technology
关键词
电子束曝光机
光刻
曝光机
半导体器件
electron beam exposure machine
lithography
submicron fabrication
