摘要
本文介绍了武汉大学２００ｋｅＶ离子注入机的改进情况，用贝纳斯离子源替换了原有的高频离子源，使输出流强由几十微安提高到毫安级，离子种类由原来单电荷的气体离子扩展到多电荷离子和金属离子。用该机对半导体ＢａＴｉＯ３陶瓷注入Ｃｕ离子，使材料的ＰＴＣＲ突跳幅度增加，室温电阻率提高，证实Ｃｕ（２＋）离子在ＰＴＣＲ材料晶界起着电子陷阱作用。
A home-made ion implanter has been improved in our Lab. The former RF ion source is replaced by a Bernas ion source and the optic length is shortened. Thus the ion current increases from several tens μA to about lmA and the sorts of ions are broadened from only the single charge gas ions to the multiple charges and metal ions. So that improved ion implanter is more suitable for the research and eduction tasks.
出处
《微细加工技术》
1996年第1期49-52,共4页
Microfabrication Technology
