半绝缘GaAs中EL2能级低温精细结构和光猝灭效应

Low-Temperature Fine Structure and Optical Quenchina Effect of EL2 in SI-GaAs

本研究采用近红外光谱法和低温测量技术,获得了EL2能级的心内跃迁特征光谱和包括6个小峰的精细结构。探讨了心内跃迁与横向声学(TA)声子的耦合机理,系统观察了它的光猝灭效应,提出亚稳态模型,得出了由10K升温过程EL2能级近红外吸收与温度的依赖关系,确定了115K为亚稳态恢复至稳态的最低温度转变点。由实验结果提供的EL2能级内部结构的信息,提出EL2能级的理论模型。

In this paper, we have reported the special spectrum of intracenter electronic transition on EL2 deep level and its fine structure including six peaks using near infrared absorption method and low-temperature measurement and investigated the coupling mechanism between intracenter electronic excitation and traverse acoustic phonons. Optical quenching effect has been observed and a metastable state model is proposed here. The relationship between EL2 infrared absorption and temperature ranging from 10K to 300K is given. The 115K was determined as the temperature transformation point from metastable stata to stable state. Based on the EL2 intra-structure information obtained from the experimental results, EL2 level theoretic model has been suggested.