摘要
In this review the electronic properties of cubic IV-VI compound hetero-, quantum well-, and superlattice structures are summarized. The host materials have a direct narrow gap at the L-points of the Brillouin-zone. In pseudobinary alloys (PbSnTe, PbSnSe) the gap decreases to zero and becomes inverted with higher Sn-concentrations, which offers the fasci-
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第4期403-404,共2页
Research & Progress of SSE
