三稳态共振隧穿器件的研制

Research of Tristable RTD

在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件,室温下可以达到较高的电流峰谷比5.2∶1。器件采用两个隧穿二极管背靠背串联的结构,能更大程度提高集成度,可以在多值逻辑或其他有关降低电路复杂性方面获得较为广泛的应用。

The tristable resonant tunneling devices （RTD） with a double negative differential resistance in its I-V characteristics have a high current ratio （5.2：1） of peak to valley at roomtemperature. These devices, using a structure of back-to-back connector in series between two RTD, can improve the device integrated level and so could be widely applied in multiple valued logics （MVL） and other aspects relevant to reducing circuit complexity.