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High power red-light GalnP/AlGalnP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing 被引量:6

High power red-light GalnP/AlGalnP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
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摘要 The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520. 540, and 580 ℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 ℃. When the blue shift was 24.7 meV at 480 ℃, the COD power for the window LD was 86.7% higher than the conventional LD. The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520. 540, and 580 ℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 ℃. When the blue shift was 24.7 meV at 480 ℃, the COD power for the window LD was 86.7% higher than the conventional LD.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2006年第1期27-29,共3页 中国光学快报(英文版)
基金 The authors would like to thank Guohong Wang for thegrowth of the GaInP/AIGaInP material, and Qiang Gui for assistance in experimental workThe research was supported by the National Natural Science Foundation of China under Grant No. 60236030
关键词 Metallorganic chemical vapor deposition PHOTOLUMINESCENCE Semiconducting aluminum compounds Semiconducting gallium compounds Semiconductor quantum wells Zinc Metallorganic chemical vapor deposition Photoluminescence Semiconducting aluminum compounds Semiconducting gallium compounds Semiconductor quantum wells Zinc
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  • 1K. Masumoto,I. Yamada,H. Tanaka,Y. Fujise,K. Hashimoto.Tissue distribution of a new photosensitizer ATX-S10Na(II) and effect of a diode laser (670 nm) in photodynamic therapy[J].Lasers in Medical Science.2003(3)
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