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一种新型微小等离子体发生器 被引量:2

A New Microplasma Reactor for Scanning Plasma Etching
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摘要 提出了一种基于并行探针技术的扫描等离子体加工新方法,即通过在并行探针针尖上集成微小等离子体发生器,从而实现无掩膜的扫描加工。采用二维流体模型对其中的微小等离子体发生器进行了数值仿真研究。该微小等离子体发生器为微空心阴极放电器件,当工作气体为SF6,工作气压在5 kPa^9 kPa时,空心阴极内的F原子浓度在3×1011cm-3~1.7×1012cm-3之间变化,基本满足硅材料扫描刻蚀加工的需求。 A new type of scanning plasma etching based on scanning probe array is presented and the microplasma reactor in it is digitally simulated with a two dimensional fluid model. The reactor is a micro hollow cathod discharge device. When the operating gas is SF6 and its pressure is 5 kPa-9 kPa the F atom density within the hollow cathod is between 3×10^11cm^-3 and 1.7×10^12cm^-3, which could satisfy the requirement for silicon scanning etching.
出处 《微细加工技术》 2005年第4期59-64,共6页 Microfabrication Technology
基金 高等学校博士点学科点专项科研基金资助项目(20030358018)
关键词 扫描等离子体刻蚀 等离子体模拟 微等离子体 scanning plasma etching plasma modeling micro plasma
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参考文献13

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同被引文献14

  • 1Wilson C G, Gianchandan Y B. Silicon micro-machining using in situ DC microplasmas [ J] .J Microelectromech Syst, 1996,10(1) :50 - 54.
  • 2Sankaran R M, Giapis K P. Maskless etching of silicon using patterned microdischarges [J] .Appl Phys Lett, 2001,79 : 593 - 595.
  • 3Snow E S, Campbell Pual M, Perkins F Keith. Nanofa- brieation with proximal probes [ J].Proeeedings of the IEEE, 1997,85(4) :601 - 611.
  • 4Petre A R, Bazavan M, Covlea V, et al. Characterization of a DC plasma with hollow cathode effect [J] .Romanian Reports in Physics, 2004,56 (2) : 271 - 276.
  • 5Christophe Cardinaud, Marie-Claude Peignon, Pierre- Yves Tessier. Plasma etching: principles, mechanisms, application to micro- and nanotechnologies [J]. Applied Surface Science, 2000, 164(1-4): 72-83.
  • 6Guo W, Sawin H H. Review of profile and roughening simulation in microelectronics plasma etching [J]. Journal of Physics D: Applied Physics, 2009, 42(19): 1-17.
  • 7Liptak R W, Devetter B, Thomas II1 J H, et al. SF6 plasma etching of silicon nanocrystals [J]. Nanotechnology, 2009, 20(3): 1-5.
  • 8Wilson C G, Gianchandan Y B. Silicon micro-machining using in situ DC microplasmas [J]. Journal of Microelectro Mechanical System, 1996, 10(1): 50-54.
  • 9Sankaran R M, Giapis K P. Maskless etching of silicon using patterned microdischarges [J]. Appl. Phys. Lett., 2001, 79(5): 593-595.
  • 10Snow E S, Campbell Pual M, Perkins F Keith. Nano- fabrication with proximal probes[J]. Proceedings of the IEEE, 1997, 85(4): 870-873.

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