摘要
分析了发光二极管阵列上隔离沟槽的理想尺寸。采用湿法腐蚀方法对金属层、p-GaP层及多层AlGaInP进行了逐层腐蚀,完成了宽2μm深6μm的上隔离沟槽的制作。腐蚀后的上隔离沟槽边缘平整,其深度和宽度可以解决注入电流在相邻像素之间产生的干扰问题。
The reasonable size of isolation grooves on the top surface of AlGaInP-LED arrays is analysed. The wet etching is used to etch the metal layer, p-Gap layer and multiple layers of AlGaInP separatly to complete the fabrication of top surface isolation grooves of 2 μm width and 6 μm depth. The edges of the grooves after etching are plane and smooth. The depth and width of the grooves can solve the interference problem induced by the injection current between the adjacent pixels.
出处
《微细加工技术》
EI
2005年第4期76-80,共5页
Microfabrication Technology
基金
吉林省科技发展计划资助项目(20030513)
