摘要
As the thickness of an SOI layer varies,a minimum breakdown voltage is reached when the thickness is about 2μm. The vertical electric field of the SOI LDMOS with a drift region which is vertically linearly graded is constant. The vertically linearly graded concentration drift can be achieved by impurity implanting followed by thermal diffusion. In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%. The on-state resistance is lowered by 24 % because of the higher impurity concentration of the SOI surface.
随着SOI层厚度的变化,当SOI层的厚度为2μm时,SOILDMOS器件具有一个最佳的击穿电压.如果漂移区纵向的杂质浓度为线性分布,那么它的纵向电场就会为一个常数,击穿电压会达到最大值,而这种杂质浓度线性分布的漂移区可以通过热扩散得到.采用这种方法制得的SOILDMOS的纵向击穿电压提高了43%,导通电阻降低了24%,这是因为它的表面浓度更高.
