低能碳离子束沉积(111)织构的立方SiC薄膜

Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition

在硅衬底上利用具有质量选择功能的低能离子束沉积技术沉积碳离子制备出除碳、硅之外无其他杂质元素的纯净的立方SiC薄膜.利用X射线光电子谱、俄歇电子能谱、X射线衍射对样品进行了表征.结果显示常温和400℃制备的样品为非晶结构,在800℃制备的样品由一富碳的表面层和有着良好化学计量比的SiC层组成,碳化硅晶体薄膜是(111)织构的.通过分析可知衬底温度、离子沉积能量和样品保温扩散时间等因素综合在一起对于在硅上沉积SiC薄膜起着重要作用.远远大于TRIM预测厚度的SiC薄膜的获得是高的衬底温度、一定注入能量的碳离子引起的增强扩散以及通道注入效应综合作用的结果.

The （111） textured cubic silicon carbide （3C-SiC） thin films are deposited on （111） Si substrates using the mass-selected ion beam deposition technique at various substrate temperatures. These films are characterized by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and X-ray diffraction. The carbon ions are reacted with the Si substrates and the amorphous Si-C layers are obtained at room temperature and 400℃, respectively, while the （111） textured 3C-SiC films are formed at 800 ℃. In addition, the mechanism of SiC formation is also discussed based on the diffusion process. The SiC thin films are much thicker than those predicted by TRIM, due to the channel effect and the enhanced diffusion caused by implanted ions with certain energies at high substrate temperatures.