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室温铁磁性Al_2O_3∶Mn的制备及性质

Magnetic and Structural Properties of Room-Temperature Ferromagnetic Al_2O_3∶Mn
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摘要 以Al2O3为衬底利用多能态离子注入法在离子注入设备上制备了一系列具有室温铁磁性的Al2O3∶Mn样品.在Al2O3的X射线衍射峰附近发现新的衍射峰,该衍射峰既可能对应一种未知新相,也可能对应Al2O3∶Mn固溶体.所有样品都具有磁滞现象和室温铁磁性. Room-temperature ferromagnetic Al2O3: Mn samples are prepared with the multi-energy ion implantation method by an ion beam implantation system. A new diffraction peak is observed near the Al2O3, which corresponds to a new unknown phase or to the solid solution phase of AAl2O3: Mn. Magnetic hysteresis-loops of all Al2O3: Mn samples are obtained at room temperature. This indicates that all samples are ferromagnetic at room-temperature.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第12期2390-2395,共6页 半导体学报(英文版)
关键词 铁磁性 X射线衍射 离子注入法 ferromagnetism X-ray diffraction ion implantation method
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参考文献16

  • 1Ohno H. Making nonmagnetic semiconductors ferromagnetic.Science, 1998,281:951.
  • 2Theodoropoulou N, Hebard A F. Unconventional carrier-mediated ferromagnetism above room temperature. Phys Rev Lett, 2002,89: 107203.
  • 3Ohno H,Chiba D,Matsukura F,et al. Electric-field control of ferromagnetism. Nature, 2000,408 : 944.
  • 4Fiederling R,Kleim M,Reuscher G,et al. Injection and detection of a spin-polarized current in a light-emitting diode. Nature, 1999,402 : 787.
  • 5Ohno Y, Young D K, Beschoten B,et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999,402 : 790.
  • 6Konig J, Lin H H, MacDonald A H. Theory of diluted magnetic semiconductor ferromagnetism. Phys Rev Lett, 2000,84:5628.
  • 7Dietl T,Ohno H, Matsukura F,et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors.Science, 2000,287 :1019.
  • 8Theodoropoulou N, Hebard A F, Overberg M E, et al. Magnetic and structural properties of Mn-implanted GaN. Appl Phys Lett ,2001,78:3475.
  • 9Strite S, Morkoc H. CaN, AIN, and InN: a review. J Vac Sci Technol, 1992, B10 : 1237.
  • 10Lin M E, Strite S, Agarwal A, et al. CaN grown on hydrogen plasma cleaned 6H-SiC substrates. Appl Phys Lett, 1993,62 :702.

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