低电场应力下闪速存储器的退化特性

Degradation in Flash Memory Under Low Electric Field Stress

基于负栅源边擦除的闪速存储器存储单元,研究了形成应力诱生漏电流的三种导电机制,同时采用新的实验方法对引起瞬态和稳态电流的电压漂移量进行了测量.并利用电容耦合效应模型对闪速存储器存储单元的可靠性进行了研究,结果表明,在低电场应力下,其可靠性问题主要由载流子在氧化层里充放电引起.

Based on the negative gate source-side erased flash memory cell, three conduction mechanisms causing stress-induced leakage current are studied. The voltage shifts which cause steady-state and transient currents are measured by new experimental methods. The reliability of flash memory cells is investigated using the capacitance coupling effect model. The results show that the cell reliability under a low electric field stress is mainly affected by the carriers charging and discharging inside the oxide.