摘要
总结了硅纳米线在电学特性方面的研究进展,重点分析了本征及掺杂硅纳米线的载流子浓度与迁移率、场发射及电子输运特性。研究表明通过对硅纳米线进行掺杂可提高载流子浓度及迁移率、场发射和电子输运性能,随硅纳米线直径的减小其电学性能增强。因此,硅纳米线在场效应晶体管及存储元件等纳米器件方面具有极大的应用前景。
The recent studies on electrical properties of silicon nanowires are introduced. Carrier concentration and mobility, field emission and electron transport properties of intrinsic and doped silicon nanowires are analyzed. The research results show that carrier concentration and mobility, field emission and electron transport properties can be improved by doping silicon nanowires. Electrical properties of silicon nanowires strengthen with the decrease of diameter of silicon nanowires. So silicon nanowires exhibit excellent application promising in nanoscale electron devices such as field effect transistor and memory cell.
出处
《电子器件》
EI
CAS
2005年第4期949-953,共5页
Chinese Journal of Electron Devices
基金
教育部博士点基金资助项目(20040532014)
关键词
硅纳米线
电学特性
场发射
电子输运
silicon nanowires
electrical properties
field emission
electron transport
