用光辅助MOCVD制作巨磁阻薄膜PCMO

PCMO Film Synthesized by the Photo-assisted MOCVD

用光辅助MOCVD的方法成功地在LAO,Pt/Ti/S iO2/S i,Pt/LAO等不同的衬底上生长出巨磁阻材料PCMO,并且在室温无磁场的环境中观察到由脉冲电压诱导其电阻可逆变的效应(称为EPIR效应)。实验证实,用此方法制备出的PCMO薄膜受到一定的脉冲电压驱动时,其电阻值可以增大,也可以减少,与所施加的脉冲极性有关,并且电阻值变化的大小与脉冲的数量有一定的关系,可以用多值的方式来记录和存储信息。这表明,用光辅助MOCVD制作的PCMO薄膜也具有可擦可写的,多值的存储信息的功能。可以被开发为高速读写,大容量的非易失性存储器,具有广阔的应用前景。

Pr-Ca-Mn-O （PCMO） thin films were successfully deposited on LAO, Pt/Ti/SiOJSi, Pt/ LAO substrates by photo-assisted MOCVD （PhA-MOCVD）. The electrical pulse induced resistance change （EPIR） effect was observed in the films at room temperature under the zero magnetic field. The thin film resistance can increase and decrease after electrical pulses are applied to it. The change is dependant on the pulse polarity and the number of pulses. This study shows that photo-assisted MOCVD （PhA-MOCVD） can be used to fabricate rewritable PCMO EPIR devices.