高压13.56MHz PECVD法沉积器件质量级本征微晶硅材料(英文)

Device-quality Intrinsic Microcrystalline Silicon Prepared by 13.56MHz PECVD at High Pressure

本文国内首次报道了采用高压RF-PECVD技术沉积本征微晶硅材料的结果。实验表明,增大等离子体激发功率和减小硅烷浓度都能够使薄膜材料由非晶硅逐渐向微晶硅转变,而结构上的改变使得电学特性也随之改变。通过工艺参数的优化和纯化器的使用,有效地控制了氧的掺杂,在较高的生长速度下得到了器件质量级的本征微晶硅材料。将实验得到的微晶硅作为太阳电池光吸收层,在没有ZnO背电极和没有优化窗口层材料以及p/i界面时,电池的效率达到5.22%,这进一步表明本征微晶硅材料的良好性能。

In this paper intrinsic hydrogenated microcrystalline silicon （μc-Si：H） thin films and solar cells prepared by radio-frequency plasma-enhanced chemical vapor deposition （RF-PECVD） method at high pressure are reported. Our experimental results demonstrated that either increasing plasma power or decreasing silane concentration always can lead to structural transition from amorphous silicon to microcrystalline silicon, and then the electrical properties changed along with the micro-structural evolution. By optimizing process parameters and using gas purifier, the oxygen concentration was prohibited effectively and then device-quality μc-Si ： H thin films have been got at a relative high deposition rate. Their applications as absorber layers in single-junction μc-Si ： H solar cells with 1.5μm i-layer yielded conversion efficiency of 5.22% without ZnO back reflector and without optimizing p-layer and p/i interface.