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非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 被引量：2

Study on Uncooled In_(0.53)Ga_(0.47) As/InP Infrared Detectors
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摘要 采用LPMOCVD技术生长了InGaAs红外探测器器件结构材料,其晶格失配为2.19×10-4.利用锌扩散制备探测器单元器件,光谱响应范围为0.90～1.70μm,在1.95V偏压下,暗电流为5.75×10-5A,在反向偏压为-5V时,电容为6.96×10-12F.探测器波段探测率为2.08×1011cmHz1/2W-1. The In0.53 Ga0.47 As/InP used for infrared detector was grown by low pressure metal-organic chemical vapor deposition. The lattice mismatch is 2. 19 × 10^-4. The detector was fabricated by Zn diffusion. The range of spectral response is 0.90-1. 70μm. At a bias of 1.95V the dark current is 5.75 × 10^-5A, the capacitance at - 5V is about 6.96 × 10^-12F. The detectivity is 2.08 × 10^11 cmHz1/2W^- 1.
作者 缪国庆 殷景志 金亿鑫 蒋红 张铁民 宋航
机构地区 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第6期1056-1058,共3页 Journal of Synthetic Crystals
基金 国家自然科学基金重点项目(No.50132020) 国家自然科学基金面上项目(No.50372067)资助
关键词 金属有机化学气相沉积 铟镓砷 探测器 MOCVD InGaAs detector
分类号 TN304 [电子电信—物理电子学]
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参考文献6

  • 1Rogalski A. Infrared Detectors at the Beginning of the Next Millennium [ J ]. Sensors and Materials, 2000, 12 (5) :233.
  • 2Hoogeveen R W M, Vander A. R J, Goede A P H. Extended Wavelength InGaAs Infrared ( 1 -2.4μm) Detector Arrays on SCIAMACHY for Space-based Spectrometry of the Earth Atmosphere [J]. Infrared Physics & Technology, 2001,42:1.
  • 3Cohen M J, Ettenberg M H, Lange M J, et al. Commercial and Industrial Applications of Indium Gallium Arsenide Near Infrared Focal Plane Arrays [J]. SPIE, 1999,3698:453.
  • 4Olsen G H, Ban V S. InGaAsP: The Next Generation in Photonics Materials[ J ]. Solid State Technology, 1987,2:99.
  • 5缪国庆,金亿鑫,蒋红,周天明,李树玮,元光,宋航.生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响[J].发光学报,2002,23(5):465-468. 被引量：3
  • 6缪国庆,金亿鑫,蒋红,周天明,李树玮,元光,宋航.Ⅴ/Ⅲ比对InGaAs/InP的LPMOCVD生长的影响[J].半导体光电,2002,23(4):271-273. 被引量：3

二级参考文献22

  • 1[1]Lindner A,Velling P,Prost W,et al.The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT[J]. J. Cryst.Growth,1997,170:287-291.
  • 2[2]Shigekawa N,Furuta T,Suemitsu T,et al.Impact-ionization-induced noise in InGaAs-based 0.1μm-gate HEMTs[J].Physica B,1999,272:562-564.
  • 3[3]Ducmka D C,Cueva G,Hier H,et al.DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/ In0.53Ga0.47As field effect transistors with variable gate-lengths[J]. IEEE Electron Device Letters, 2001,22(1):5-7.
  • 4[5]Oliver J D,Eastman L F.Liquid phase epitaxial growth and characterization of high purity lattice matched InxGa1-xAs on 〈111〉B InP[J]. J. Electron. Mater.,1980,9(4):693-712.
  • 5[6]Jolly S T,Narayan S Y,Packowski J P,et al.Growth and characterization of GaAs,GaInAs and GaInAsP for microwave applications[J]. Pro.SPIE,1982, 323: 74-80.
  • 6[7]Kuo C P,Cohen R M,Stringfellow G B.MOVPE growth of InGaAs[J].J.Crystal Growth,1983,64: 461-470.
  • 7[8]Kitada T,Ohashi M,Shimomura S,et al.High-quality InGaAs layers grown on (411) A-oriented InP substrates by molecular beam epitaxy[J]. Jpn.J.Appl.Phys.,1999,38:1888-1891.
  • 8[9]Dumont H,Auvray L,Dazord J,et al.Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine[J].J.Cryst.Growth,1999,204:1-9.
  • 9[11]Chu Ryang Wie.High resolution X-ray diffraction characterization of semiconductor structure materials[J].Science and Engineering, 1994, R13(1):16-18.
  • 10[4]Rogalski A.Razeghi M.Narrow gap semiconductor photodiodes[J].Por.SPIE, 1998, 3287:2-13.

共引文献3

同被引文献13

  • 1潘青.用InGaAs材料制作的2.6μm光电探测器[J].半导体光电,1999,20(2):79-82. 被引量：6
  • 2郝国强,张永刚,刘天东,李爱珍.InGaAs PIN光电探测器的暗电流特性研究[J].半导体光电,2004,25(5):341-344. 被引量：22
  • 3GUO Kangzhu,OU Haijing,Grycewicza Thomas. 1D In-GaAs Lock-in FPA[ J J. Proceedings of SPIE,2004,5406: 65-72.
  • 4Rogalski Antoni. Infrared detectors: status and trends[ J ]. Progress in Quantum Electronics,2003, 27(2):59-210.
  • 5Piotrowski J, Gawron W. Ultimate performance of inflared photodetectors and figure of merit of detector material [J ]. Infrared physics & Technology,1997,38:63-68.
  • 6Forrest S R, Leheny R F, Nahory R E. In0.53Ga0.47As photodiodes with dark currellt limited by generation recombination and tunneling[J]. Appl Phys Lett,1980,37 (3):322-325.
  • 7Hoogeveen R W M, van der A P,. J, Goede A P H , Ex- tended wavelength InGaAs infrared (1.0-2.40,m) detector arrays on SCIAMACHY for space based spectrometry of the Earth atmosphere[ J ]. Infrared Phys Techn,2001,42(1): 1-16.
  • 8Zhang T M, Miao G Q, Jin Y X, et al. Effect of In con- tent of the buffer layer on crystalline quality and electrical property of Ino.uGa0.,ks/InP grown by LP-MOCVD[ J ]. Microelectromcs Journal, 2007,38(3):398-400.
  • 9Zhang T M, Miao G Q, Jin Y X, et al. Effect of buffer growth temperature on crystalline quality and optical prop= erty of Im.Gao.,sAs/InP grown by LP-MOCVD[ J ]. Jour- nal of Alloys and Compounds,2008,458(1/2): 363-365.
  • 10Zhang T M, Miao G Q, Jin Y x, et al. Effect of buffer thickness on properties of In0.sGaovAs/InP with two-step growth technique[ J ]. Journal of Alloys and Compounds, 2009,472 (1/2) :587-590.

引证文献2

人工晶体学报
2005年 第6期

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