MOCVD生长In_xGa_(1-x)N薄膜的表征

Characterization of In_xGa_(1-x)N Layers Grown by MOCVD

本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa1-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响。InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程。通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少。

InxGa1-xN films were deposited on （0001）sapphire substrates with GaN buffer layers using various growth paremeters by metalorganic chemical vapor deposition （MOCVD）. XRD, AFM and SEM were employed to analyze the influences of growth parameters on the In content and the properties of Inx Ga1-xN films. Deposition of Inx Ga1-x N films included two processes：first, GaN buffer layers were grown on sapphire substrates;then, InxGa1-xN films were deposited on GaN buffer layers. By means of XRD, AFM and SEM, we find that In content of InxGa1-xN films could be efficiently controlled by growth temperature and flow rate of TMGa, and the defects on the surface of InxGa1-xN films decreased with increase of growth temperature.