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Monte Carlo方法计算定量俄歇电子能谱分析中的背散射因子(英文) 被引量：1

Monte Carlo calculation of backscattering factor for quantitative AES analysis
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摘要 本文通过Monte Carlo方法模拟计算了定量俄歇电子能谱分析(如对Ni的L3VV俄歇电子和Pt的M5N67N67俄歇电子)中的背散射因子。由于计算中结合了相关领域的各种最新进展,因此该新计算可以为定量俄歇电子能谱分析提供更为准确的参数。 Using a Monte Carlo simulation method a novel calculation on the backscattering factor in quantitative Auger electron spectroscopy （AES） analysis has been performed, for Ni L3VV and Pt M5N67 N67 Auger excitation as examples. Up-to-date advances in the related fields have been considered in the calculation, leading to more accurate results for quantitative AES analysis.
作者 谈文舒 丁泽军 张增明
机构地区 合肥微尺度物质科学国家实验室中国科学技术大学物理系
出处 《电子显微学报》 CAS CSCD 2005年第6期541-546,共6页 Journal of Chinese Electron Microscopy Society
基金 National Natural Science Foundation of China(No.10025420,No.90206009)
关键词 背散射因子 俄歇电子能谱(AEs) 蒙特卡洛(Monte Carlo) backscattering factor AES Monte Carlo
分类号 O657.62 [理学—分析化学]
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参考文献18

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二级参考文献8

共引文献10

同被引文献11

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电子显微学报
2005年 第6期

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