硅衬底在片螺旋电感建模及其参数提取

Modeling and Parameters Extraction of Spiral Inductors for Silicon-based RFICs

对重掺杂的硅衬底来说,衬底涡流效应已变得较为明显,如何精确的表征这一方面的影响,对于在标准CMOS工艺上实现的在片螺旋电感建模来说,已显得至关重要。该文给出了一种新的采用Transformer Loop来精确表征涡流效应导致的衬底损耗的在片螺旋电感模型,同时采用阶梯4元件结构和一功率电阻Rp来表征电感的趋肤效应和邻近效应,实现了级联电阻的非频变性,可以满足在SPICE等时域仿真器中大小信号及瞬态分析的需要。新的模型同样也适合于对多层电感建模,通过对实际在片电感的测试、验证,给出的模型在较宽的频段内能够精确地吻合测试数据。

In standard CMOS technology specially in heavily doped silicon substrate process, substrate loss resulted from eddy current effect become significant. A wide - band inductor model was developed that uses a transformer loop to model the substrate loss at high frequencies due to substrate eddy current loss. The model accurately predicts the skin effect and proximity effect of spiral inductor over a wide - frequency range using a ladder 4 - element structure and a power resistor. The proposed model has been verified with measured results of spiral inductor fabricated in a 0.35 -um 2P4M CMOS process. The proposed model shows excellent agreement with measured data over a wide - band frequency range.