SiC电子霍耳迁移率的计算

A Calculation of Electron Hall Mobility in SiC

基于对自身能带结构的分析以及各向同性弛豫时间近似法,采用三椭球等能面、抛物线性简化,建立了适于模拟n型6H-SiC电子霍耳迁移率和霍耳散射因子的解析模型,精确描述了不同散射机制对于6H-SiC低场电子输运特性的影响.计算结果与实测值有很好的一致性.

With analysis of conduction band structure and isotropic relaxation time approximation, an analytical model for the electron Hall mobility and Hall scattering factor of n-type 6H-SiC is proposed. The impact of different scattering mechanisms on the low field electron transport in 6H-SiC is illustrated clearly. Three ellipsoidal and parabolic constant energy surfaces simplification are used. The calculated results are in good agreement with physical measurements.