高温高压条件下金刚石单晶生长界面Auger电子能谱研究

STUDY ON AUGER ELECTRONIC ENERGY SPECTRUM ON DIAMOND MONOCRYSTAL GROWING INTERFACE UNDER HTHP

用A uger电子能谱技术分别进行金刚石单晶生长界面的金属膜表面及附近碳原子的精细A uger谱分析、金刚石单晶附近及其表面的A uger谱精细结构分析。研究结果表明,在高温高压有催化剂参与下金刚石单晶生长是双界面生长,存在两个主界面D—M及M—C。高温高压条件下石墨中碳原子经过“过渡层”及“金属催化剂层”才能将碳原子的电子构形从SP2π态改变成SP3态,从而以碳原子的金刚石四面体结构长到金刚石表面,金刚石晶格结构的形成是在金刚石表面层完成的。

Auger electronic energy spectrum was applied in the paper to analyze the metallic film surface of growing interface of diamond monocrystal and fine Auger spectrum of adjacent carbon atom, as well as Auger spectrum structure of the surroundings and surface of diamond monocrystal. The research shows that the growth of diamond monocrystal with the participation of catalyst at high temperature and high pressure （HTHP） is a double interface growth, and there are two main interfaces, namely D-M and M-C. Under HTHP only if the carbon in graphite go through transitional layer and metallic catalyst layer, could the electronic configuration transform from SP^2 π to SP^3 state, so the growth of tetrahedron structure of carbon atom on to the diamond surface and the formation of diamond crystal lattice structure is completed on diamond surface.