摘要
综述了离子束科学技术领域新的重要进展──从作为半导体掺杂手段的低剂量（１０１１～１０１６／ｃｍ２）离子注入到高剂量（１０１７～１０１８／ｃｍ２）离子注入合成新材料的离子束合成技术。讨论了高剂量注入的物理效应，介绍了利用高剂量氧注入硅合成ＳＩＭＯＸ材料的物理过程以及ＳＩＭＯＸ技术的多种应用。提出了提高ＳＩＭＯＸ材料性能的各种途径。
Recent advances in ion beam science and technology are reviewed:from low dose ion implantation as a doping method for semiconductors to ion beam synthesis by high dose ion implantation as a means of forming new materials. The physical effects of high dose ion implantation are discussed. The formation process of SIMOX materials and their various applications are described.Approaches to improving the qualities of SIMOX materials are presented.
出处
《微电子学》
CAS
CSCD
1996年第3期137-142,共6页
Microelectronics
关键词
半导体材料
SOI
离子注入
离子束合成
SIMOX
Semiconductor material
SOI
Ion beam synthesis
Ion implantation
Seperation by implanted oxygen
