全耗尽SOIMOSFET及CMOS／SOI电路的研究

Fabrication of Fully Depleted SOI MOSFET'S and CMOS/SOI IC's

采用ＳＩＭＯＸ材料，研制了一种全耗尽ＣＭＯＳ／ＳＯＩ模拟开关电路。研究了全耗尽ＳＯＩＭＯＳ场效应晶体管的阈值电压与背栅偏置的依赖关系，对漏源击穿的Ｓｎａｐｂａｃｋ特性进行了分析。介绍了薄层ＣＭＯＳ／ＳＩＭＯＸ制作工艺，给出了全耗尽ＣＭＯＳ／ＳＯＩ电路的测试结果。

Fully depleted SOI MOSFET's were fabricated using SIMOX and a CMOS/SOI analog switch was made based on SOI/MOSFET' s. The dependence of threshold voltage of fully depleted SOI MOSFET's on the back-gate bias was investigated. The snapback of drain-source breakdown was characterized. The thin CMOS/SIMOX process is brifly introduced' Test results of the developed fully depleted CMOS/SOI circuit are given.