CMOS／SOI的高温特性分析

Analysis of High Temperature Properties of CMOS/SOI

采用ＳＩＭＯＸ和ＢＥＳＯＩ材料制作了ＣＭＯＳ倒相器电路，在２５～２００℃的不同温度下测量了ＰＭＯＳ和ＮＭＯＳ的亚阈特性曲线。实验结果显示，薄膜全耗ＳＩＭＯＸ器件的阈值电压和泄漏电流随温度的变化小于厚膜ＢＥＳＯＩ器件。

CMOS inverter circuits were fabricated on SIMOX (Separation by Implantation of Oxygen) and BESOI (Bonding and Etch-back Silicon-on-Insulator) materials. The subthreshold characteristics of PMOS and NMOS were measured at different temperature points from room temperature to 200℃. Experiments show that the temperature dependence of the threshold voltage and the leakage current for thin film fully-depleted SIMOX devices were lower than that for thick film BESOI devices.