摘要
隧道小孔中超薄SIO2的生长是EEPROM电路制造的关键工艺之一。采用SUPREM-Ⅱ艺模拟程序对超薄SIO2的热生长进行了工艺模拟。经过大量的工艺实验及优化,确定了超薄SIO2的最佳生长条件,生长出的SIO2性能良好,完全可满足EEPROM研制的要求。
The growth of ultrathin SiO2 layer in tunnel region is one of the key processes in the fabrication of EEPROM's. Process modeling of thermal growth of ultrathin SiO2 were made using SUPREM-Ⅲ program. Based on a number of process experiments and optimization, optimal conditions for ultrathin SiO2 growth were obtained. The grown SiO2 has good performance and meets the requirments for EEPROM's.
出处
《微电子学》
CAS
CSCD
1996年第3期189-191,共3页
Microelectronics