一种新型P阱NMOS功率集成电路制作技术

A Novel Technique For P-Well NMOS Power IC's

提出一种新型的Ｐ阱ＮＭＯＳ功率集成电路制作技术。理论分析表明，该技术可以较好地实现ＶＤＭＯＳＦＥＴ与Ｐ阱ＮＭＯＳ电路的兼容集成。实验结果表明，利用该技术获得的器件结构具有良好的击穿特性。

A novel technique is proposed for p-well NMOS PIC fabrication.Theoretical analysis on the typical structure shows that VDMOS cells and p-well NMOS IC'S can be compatibly integrated into one chip. Experiment results demonstrate that p-n junctions obtained with the new technique have the same breakdown properties as the conventionally diffused ones.