摘要
采用了合理的物理模犁和精确的数值解法，对ＭＣＴ进行了一维数值求解，得到了器件内部载流子分布和电场分布以及外部端特性。这些结果对ＭＣＴ的优化设计具有实际指导意义。
One-dimensional solution of MOS Controlled Thyristor (MCT) is obtained by using a reasonable physical model and accurate numerical method. Inner carrier distribution and electrical field distribution as well as external terminal characteristics of the device are given. These results are much significant for optimizing the device design.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第2期143-149,共7页
Research & Progress of SSE
基金
江苏省自然科学基金
关键词
MCT
数值解法
载流子分布
新型功率器件
MCT(MOS Controlled Thyristor) Numerical Method Carrier Distribution Electrical Field Distribution
