集成电路的可靠性模型与模拟

Reliability Model and Simulation For Integrated Circuits

随着集成电路（ＩＣ）尺寸的缩小，集成度的提高，必须在设计阶段对其可靠性进行预测。文中在阐述了与ＩＣ可靠性密切相关的热载流子效应、时间决定的介质击穿效应、互连线电迁移效应、双极晶体管退化效应及其模型后，给出了ＩＣ可靠性模拟的一般概念、方法和部分模拟结果。

With the shrinked device of feature size and increased density of integrated circuit (IC), reliability simulation should be executed in the design stage. In this paper,the effects related to IC reliability,such as hot-carrier effect; timedependent oxide breakdown, interconnect electromigration and bipolar transistor gain degradation,are described. Then, the general principle and methods of IC reliability simulation and some results are given.