低温区杂质电离率的计算

Computation of Ionization Rate of Impurities at Low Temperature

用纯数值技术计算了５０～１５０Ｋ下磷、硼非补偿和补偿时在硅中的电离率，考虑了Ｆｅｒｍｉ－Ｄｉｒａｃ统计、禁带变窄效应、冻析效应以及温度对各种物理参数的影响，结果发现比简化模型有较高的数值精度，而且可插入到半导体器件模拟软件ＰＩＳＣＥＳ中。

Using pure numerical method,the ionization rates of phosphorus and boron in silicon for compensatory and non-compensatory cases at 50- 150 K are presented,Fermi-Dirac statistics, bandgap narrowing, freezeout effect and dependences of various physical parameters on temperature are included. The results have more numerical accuracy than simple models and the program can be inserted into the software of semiconductor device simulation, PISCES.