用于高功率密度功率因素校正的新一代600V砷化镓肖特基二极管
A New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications
摘要
在200W连续导通模式功率因数佼正(PFC)系统中,新一代600V砷化镓(GaAs)肖特基二极管与硅和碳化硅(SiC)二极管比较,砷化镓,碳化硅在PFC系统中的损耗减少高达25%。由于砷化镓有较低的结电容,砷化镓相对碳化硅高的通态损耗被较低的MOSFET损耗弥补了。和碳化硅技术相比,砷化镓有成本和可靠性优势。对于高频和高密度应用来说,新一代的砷化镓二极管是很有前景的。
A new generation of 600V GaAs schottky diodes is compared with Si and SiC diodes in a 200W CCM-PFC system.With both,GaAs and SiC,thd PFC system losses were reduced up to 25%.Higher on-state losses of GaAs vs.SiC compensated by lower MOSFET losses due to the GaAs lower junction capacitance.Given the cost advantage and ruggedness of GaAs compared to SiC technology,this new GaAs diode is a very promising device for high frequency and high power density applications
出处
《电力电子》
2005年第6期22-25,共4页
Power Electronics
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