摘要
在现代电源的应用中,需要利用高效、高可靠性的高压开关器件来提高效率。但是要么是很少可以找到耐压大于1000V的MOSFET,要么就是耐压高的MOSFET,其RDS(on)也很大,这使得MOSFET的导通压降也很大,这是我们不希望看到的。双极性MOSFET是结合了MOSFET和IGBT优点的开关元件。本文主要对制造BiMOSFET的新工艺方法以及它的非外延型结构进行了说明。
Many applications today require reliable and efficient switches that operate efficiently at high voltages.It is rare to find MOSFETS above 1000 VDC and their high Rds(on)make their operation at high voltages unattractive.BiMOSFETs are devices,which have combined strengths of MOSFETs and IGBTs.Taking into consideration their many advantages,some desighs of power supplies for radar transmitters and pulse modutators using BiMOSFETs are presented here.
出处
《电力电子》
2005年第6期65-70,共6页
Power Electronics