摘要
La0.67Ca0.33MnO3（LCMO） films were fabricated on （100） SrTiO3（STO） and （110） NdGaO3（NGO） substrates using facing-target sputtering technique. The resistivity ρ and metal-to-semiconductor transition temperature TMS were studied as functions of thickness. Although lattice stresses in LCMO/NGO and LCMO/STO are substantially different as confirmed by the XRD analyses, there is no direct correlation between structure and electronic transport in LCMO films, indicating the absence of strain effects on the transport properties, for example, ρ TMS and activation energy Ea.
La0.67Ca0.33MnO3（LCMO） films were fabricated on （100） SrTiO3（STO） and （110） NdGaO3（NGO） substrates using facing-target sputtering technique. The resistivity ρ and metal-to-semiconductor transition temperature TMS were studied as functions of thickness. Although lattice stresses in LCMO/NGO and LCMO/STO are substantially different as confirmed by the XRD analyses, there is no direct correlation between structure and electronic transport in LCMO films, indicating the absence of strain effects on the transport properties, for example, ρ TMS and activation energy Ea.
基金
ProjectsupportedbytheHongKongResearchGrantCouncil
andChinaPostdoctoralScienceFoundation
